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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT FAST SWITCHING DIODE VOLTAGE 50 Volts CURRENT 200 mAmpere APPLICATION * Extreme fast switches. LL4150PT FEATURE * Small surface mounting type. (MINI-MELF) * High speed. (TRR=4.0nSec Typ.) * Suitable for high packing density. * Maximum total power disspation is 500mW. Mini-Melf CONSTRUCTION 0.4 CATHODE BAND 0.4 * Silicon epitaxial planar 1.40.1 (1) +0.2 3.4 0.1 (2) 1.5Max. CIRCUIT (2) (1) Dimensions in millimeters Mini-Melf MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Peak Reverse Voltage Reverse Voltage Repetitive Peak Forward Current Average Forward Current Peak Forward Surge Current Power Dissipation at TA=25 C Maximum Capacitance (Note 1) Maximum Reverse Recovery Time (Note 2) Operating Temperature Range Storage Temperature Range o SYMBOL VRM VR IF IFAV @ t=1.0uS IFSM Ptot Ctot TRR TJ TSTG LL4150PT 50 50 200 200 0.5 500 4.0 4.0 175 -65 to +175 UNITS Volts Volts mAmps mAmps Amps mWatt pF nS o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage Maximum Average Reverse Current at Reverse Voltage,VR=50V Reverse Breakdown Voltage at Ir=5mA NOTES : 1. Measured at 1.0 MH and applied reverse voltage of 0 volt. Z 2. IF=-IR=10 to 200mA,to 0.1IF @ TA = 25oC IR @ TJ = 150oC Vbr 100 35(min.) uAmps Volts 2007-04 SYMBOL VF LL4150PT 1.0 0.1 UNITS Volts uAmps RATING CHARACTERISTIC CURVES ( LL4150PT ) FIG. 1 - FORWARD CHARACTERISTICS 1000 FORWARD CURRENT, (mA) REVERSE CURRENT, (uA) 100 FIG. 2 - REVERSE CHARACTERISTICS VR=25V 100 Tj=100oC Tj=25oC 10 10 1.0 1.0 0.1 0.1 0 0.4 0.8 1.2 1.6 2.0 FORWARD VOLTAGE, (V) 0.01 0 40 80 120 160 200 JUNCTION TEMPERATURE, ( oC) FIG. 3 - DIODE CAPACITANCE 3.0 JUNCTION CAPACITANCE, (pF) 2.5 2.0 1.5 1.0 0.5 0 0.1 f=1MHz Tj=25oC 1 10 100 REVERSE VOLTAGE, (V) |
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